Gate insulation and drain current saturation mechanism in InAlN∕GaN metal-oxide-semiconductor high-electron-mobility transistors-Reference-Cited by-同舟云学术

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Gate insulation and drain current saturation mechanism in InAlN∕GaN metal-oxide-semiconductor high-electron-mobility transistors

Published:2007-07-23 Issue:4 Volume:91 Page:043509
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Pozzovivo G.,Kuzmik J.,Golka S.,Schrenk W.,Strasser G.,Pogany D.,Čičo K.,Ťapajna M.,Fröhlich K.,Carlin J.-F.,Gonschorek M.,Feltin E.,Grandjean N.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2763956

Reference12 articles.

1. Power electronics on InAlN/(In)GaN: Prospect for a record performance

2. InAlN/GaN HEMTs: a first insight into technological optimization

3. Small-signal characteristics of AlInN/GaN HEMTs

4. High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

5. Stable CW operation of field-plated GaN-AlGaN MOSHFETs at 19 W/mm

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