Modulation of the electrical properties in amorphous indium-gallium zinc-oxide semiconductor films using hydrogen incorporation-Reference-Cited by-同舟云学术

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Modulation of the electrical properties in amorphous indium-gallium zinc-oxide semiconductor films using hydrogen incorporation

Published:2017-12-11 Issue:24 Volume:111 Page:243507
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Song Aeran¹,Park Hyun-Woo¹,Chung Kwun-Bum¹,Rim You Seung²^ORCID,Son Kyoung Seok³,Lim Jun Hyung³,Chu Hye Yong³

Affiliation:

1. Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, South Korea

2. School of Intelligent Mechatronics Engineering, Sejong University, Seoul 05006, South Korea

3. Department of Display R&D center, Samsung Display, Yongin 446-711, South Korea

Funder

National Research Foundation of Korea

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5003186

Reference24 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Circuits using uniform TFTs based on amorphous In-Ga-Zn-O

3. Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing

4. 42.1: Invited Paper: Improved Amorphous In-Ga-Zn-O TFTs

5. Transparent, high mobility InGaZnO thin films deposited by PLD

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1. Control of hydrogen concentration on InGaZnO thin film using cryopumping system;Vacuum;2024-03

2. Multiple effects of hydrogen on InGaZnO thin-film transistor and the hydrogenation-resistibility enhancement;Journal of Alloys and Compounds;2023-06

3. Hydrogen diffusion and its electrical properties variation as a function of the IGZO stacking structure;Scientific Reports;2022-11-17

4. Hydrogen diffusion and its electrical properties variation as a function of the IGZO stacking structure;2022-09-22

5. Study of high-pressure hydrogen annealing effects on InGaZnO thin-film transistors;Applied Physics Letters;2022-08-15

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