Transmission electron microscopy and Auger electron spectroscopy of silicon‐on‐insulator structures prepared by high‐dose implantation of nitrogen
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336228
Reference9 articles.
1. Study of buried silicon nitride layers synthesized by ion implantation
2. The Microstructure of Silicon-on-Insulator Structures Formed by High Dose Oxygen Ion Implantation
3. Formation of Abrupt Interfaces between Surface Silicon and Buried SiO2Layers by Very High Dose Oxygen-Ion Implantation
4. Donage and in Situ Annealing During Ion Implantation
5. An Attempt at the AES Evaluation of the Composition of Off‐Stoichiometric Silicon Nitride
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