Properties of Rf Plasma Nitrided Silicon Thin Films at Different Rf Plasma Processing Powers-Reference-Cited by-同舟云学术

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Properties of Rf Plasma Nitrided Silicon Thin Films at Different Rf Plasma Processing Powers

Published:2011-09 Issue:3 Volume:120 Page:552-557
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Mohamed S.H.¹²,Raaif M.²,Abd El-Rahman A.M.²,Shaaban E.R.¹³

Affiliation:

1. Physics Department, College of Science, Qassim University, P.O.B. 6644, 51452, Buryadh, Kingdom of Saudi Arabia

2. Physics Department, Faculty of Science, Sohag University, 82524 Sohag, Egypt

3. Department of Physics, Faculty of Science, Al-Azahar University, Assiut, 71542, Egypt

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Silicon Nitride Encapsulated Silicon Nanocrystals for Lithium Ion Batteries;Plasma Processes and Polymers;2015-12-11

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