Electrical properties of β‐SiC metal‐oxide‐semiconductor structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347582
Reference8 articles.
1. C‐Vcharacteristics of SiC metal‐oxide‐semiconductor diode with a thermally grown SiO2layer
2. Interface characteristics of thermal Si02 on SiC
3. Passivation of β–SiC surface with native and nonnative oxides
4. Epitaxial growth of β–SiC on Si by low-temperature chemical vapor deposition
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