C‐Vcharacteristics of SiC metal‐oxide‐semiconductor diode with a thermally grown SiO2layer-Reference-Cited by-同舟云学术

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C‐Vcharacteristics of SiC metal‐oxide‐semiconductor diode with a thermally grown SiO2layer

Published:1981-07 Issue:1 Volume:39 Page:89-90
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Suzuki Akira,Mameno Kazunobu,Furui Nobuyuki,Matsunami Hiroyuki

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.92527

Reference11 articles.

1. Thermal Conductivity of Pure and Impure Silicon, Silicon Carbide, and Diamond

2. Breakdown field in vapor‐grown silicon carbidep‐njunctions

3. Saturated electron drift velocity in 6H silicon carbide

4. Liquid‐phase epitaxial growth of 6H‐SiC by the dipping technique for preparation of blue‐light‐emitting diodes

5. Chemical Vapor Deposition of Single Crystalline β ‐ SiC Films on Silicon Substrate with Sputtered SiC Intermediate Layer

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1. Ceramics, Electronic;Ullmann's Encyclopedia of Industrial Chemistry;2011-10-15

2. Use of Vacuum as a Gate Dielectric: The SiC VacFET;Materials Science Forum;2011-03

3. Cathodic localization of metal coatings on silicon carbide crystals;Technical Physics Letters;2002-05

4. Ceramics, Electronic;Ullmann's Encyclopedia of Industrial Chemistry;2000-06-15

5. Effects of gamma-ray irradiation on the electrical characteristics of SiC metal-oxide-semiconductor structures;Electronics and Communications in Japan (Part II: Electronics);1998-10

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