Passivation of β–SiC surface with native and nonnative oxides

Abstract

The passivation characteristics of various insulators are evaluated for the β–SiC surface. It is found that wet thermal oxides yield minimum electrical defects at the oxide-SiC interface. Dry thermal oxide results in too much charge either at the oxide-SiC interface or in the bulk. It is also shown that anodic aluminum oxide seems to possess suitable electrical properties for the fabrication of MOS structures on SiC, whereas the CVD silicon nitride proved to be the worst.