Interface characteristics of thermal Si02 on SiC-Reference-Cited by-同舟云学术

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Interface characteristics of thermal Si02 on SiC

Published:1978-07 Issue:4 Volume:15 Page:1520-1523
ISSN:0022-5355
Container-title:Journal of Vacuum Science and Technology
language:en
Short-container-title:Journal of Vacuum Science and Technology

Author:

Kee R. W.,Geib K. M.,Wilmsen C. W.,Ferry D. K.

Publisher

American Vacuum Society

Subject

General Engineering

Link

http://avs.scitation.org/doi/pdf/10.1116/1.569779

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spectroscopic ellipsometry time study of low-temperature plasma-polymerized plain trimethylsilane thin films deposited on silicon;Physica Scripta;2011-09-08

2. Thermochemical process occurring in PLD-derived SiC films during vacuum annealing;Applied Surface Science;2002-06

3. Behavior of oxygen doped SiC thin films: An x-ray photoelectron spectroscopy study;Journal of Applied Physics;2001-01

4. HF chemical etching of SiO2 on 4H and 6H SiC;Journal of Electronic Materials;2000-03

5. Charge instability effects in the system silicon carbide-insulator;Semiconductors;1997-01

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