Modeling the extended defect evolution in lateral epitaxial overgrowth of GaN: Subgrain stability
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1524013
Reference42 articles.
1. Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition
2. Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN
3. Scattering of electrons at threading dislocations in GaN
4. Dislocation Scattering in GaN
5. Free-carrier mobility in GaN in the presence of dislocation walls
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