Growth of semi-polar (112¯2) GaN on m-plane sapphire via In-Situ Multiple Ammonia Treatment (I-SMAT) method-Reference-Cited by-同舟云学术

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Growth of semi-polar (112¯2) GaN on m-plane sapphire via In-Situ Multiple Ammonia Treatment (I-SMAT) method

Published:2020-04 Issue: Volume:174 Page:109208
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Anuar Afiq,Ahmad Makinudin Abdullah Haaziq,Al-Zuhairi Omar,Chanlek Narong,Abu Bakar Ahmad Shuhaimi,Supangat Azzuliani

Funder

Universiti Malaya

Ministry of Higher Education, Malaysia

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference48 articles.

1. GaN and InGaN (112¯2)surfaces: group-III adlayers and indium incorporation;Northrup;Appl. Phys. Lett.,2009

2. Surface energetics, pit formation, and chemical ordering in InGaN alloys;Northrup;Appl. Phys. Lett.,1999

3. Origin of the “green gap”: increasing nonradiative recombination in indium‐rich GaInN/GaN quantum well structures;Langer;Phys. Status Solidi C,2011

4. Investigation on the performance and efficiency droop behaviors of InGaN/GaN multiple quantum well green LEDs with various GaN cap layer thicknesses;Yang;Vacuum,2016

5. Low resistive InGaN film grown by metalorganic chemical vapor deposition;Shrestha;Vacuum,2020

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2. Comparative investigation of semipolar (11–22) GaN grown on patterned (113) Si with different V/III ratios via MOCVD;Semiconductor Science and Technology;2023-02-06

3. A comparative investigation of the optical properties of polar and semipolar GaN epi-films grown by metalorganic chemical vapor deposition;Semiconductor Science and Technology;2022-05-05

4. Non-Polar Gallium Nitride for Photodetection Applications: A Systematic Review;Coatings;2022-02-18

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