Surface energetics, pit formation, and chemical ordering in InGaN alloys
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123837
Reference14 articles.
1. Reconstructions of theGaN(0001¯)Surface
2. Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase Epitaxy
3. Growth of GaN and $\bf Al_{0.2}Ga_{0.8}N$ on Patterened Substrates via Organometallic Vapor Phase Epitaxy
4. Pit formation in GaInN quantum wells
5. Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells
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1. Effects of structural defects on optical properties of InxGa1−xN layers and quantum wells;Journal of Applied Physics;2024-03-01
2. Mechanism of V-Shaped Pits on Promoting Hole Injection in the InGaN MQWs: First-Principles Investigation;ACS Omega;2024-01-29
3. Enhanced Efficiency InGaN/GaN Multiple Quantum Well Structures via Strain Engineering and Ultrathin Subwells Formed by V-Pit Sidewalls;ACS Applied Optical Materials;2024-01-02
4. Investigating defects in InGaN based optoelectronics: from material and device perspective;Materials Research Express;2023-02-01
5. Structural, Optical, and Electrical Characterization of 643 nm Red InGaN Multiquantum Wells Grown on Strain‐Relaxed InGaN Templates;Advanced Photonics Research;2023-01-20
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