Affiliation:
1. Department of Chemical Engineering University of California Santa Barbara CA 93106 USA
2. Department of Electrical and Computer Engineering University of California Santa Barbara CA 93106 USA
3. Department of Materials University of California Santa Barbara CA 93106 USA
Abstract
Red‐emitting (≈643 nm) InGaN multiquantum well active device layers and micro‐LEDs are grown by metal organic chemical vapor deposition (MOCVD) on relaxed InGaN templates, the latter created via thermal decomposition of an InGaN underlayer, and examined via power‐ and temperature‐dependent photoluminescence and electrical measurements. Maximum internal quantum efficiencies are determined to be 7.5% at an excitation power density of 13 W cm−2, radiative recombination occurs through monomolecular recombination, and the fabricated micro‐LEDs do not show any efficiency degradation with decreasing size. Peak on‐wafer external quantum efficiency (EQE) of a 5 × 5 μm2 device is 0.44%, demonstrating that thermally decomposed InGaN “strain‐relaxing” underlayers may be useful for long wavelength micro‐LED applications.
Funder
Solid State Lighting and Energy Electronics Center, University of California Santa Barbara
Division of Materials Research
Subject
Pharmacology (medical),Complementary and alternative medicine,Pharmaceutical Science
Cited by
6 articles.
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