Low resistive InGaN film grown by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

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Low resistive InGaN film grown by metalorganic chemical vapor deposition

Published:2020-01 Issue: Volume:171 Page:108974
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Shrestha Niraj Man,Chauhan Prerna,Wong Yuen-Yee,Li Yiming,Samukawa Seiji,Chang Edward Yi

Funder

Ministry of Science and Technology (MOST), Taiwan

Japan Society for the Promotion of Science

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference19 articles.

1. Step buffer layer of Al0.25Ga0.75N/Al0.08Ga0.92N on P-AlInN gate normally-off high electron mobility transistors;Shrestha;Semicond. Sci. Technol.,2016

2. A novel AlGaN/GaN multiple aperture vertical high electron mobility transistor with silicon oxide current blocking layer;Shrestha;Vacuum,2015

3. InAlN/AlN/GaN HEMTs with regrown ohmic contacts and fT of 370 GHz;Yue;IEEE Electron. Device Lett.,2012

4. MBE regrown ohmics in InAlN HEMTs with a regrowth interface resistance of 0.05 Ω-mm;Jia;IEEE Electron. Device Lett.,2012

5. Plasma MBE growth conditions of AlGaN/GaN high-electron-mobility transistors on silicon and their device characteristics with epitaxially regrown ohmic contacts;Ganguly;APEX,2014

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Use of Gold Nanoparticles in Indium Gallium Nitride Growth for Improving the Photoactive Electrical Performance of p–n Junctions;ACS Applied Electronic Materials;2024-05-07

2. Nonalloyed ohmic contact development with n+ InGaN regrowth method and analysis of its effect on AlGaN/GaN HEMT devices;Microelectronics Journal;2023-05

3. Parasitic behavior of different V/III ratios on the properties of InGaN/GaN heterostructures by MOCVD technique;Journal of Alloys and Compounds;2023-03

4. Nonalloyed Ohmic Contacts in AlGaN/GaN HEMTs With MOCVD Regrowth of InGaN for Ka-Band Applications;IEEE Transactions on Electron Devices;2021-03

5. A MOVPE method for improving InGaN growth quality by pre-introducing TMIn*;Chinese Physics B;2021-01-01

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