Plasma MBE growth conditions of AlGaN/GaN high-electron-mobility transistors on silicon and their device characteristics with epitaxially regrown ohmic contacts
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/7/i=10/a=105501/pdf
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1. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
2. Self-aligned-gate GaN-HEMTs with heavily-doped n+-GaN ohmic contacts to 2DEG
3. Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit
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