A controllable mechanism of forming extremely low‐resistance nonalloyed ohmic contacts to group III‐V compound semiconductors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.355002
Reference38 articles.
1. Ohmic contacts top‐type InP using Be‐Au metallization
2. Ohmic contacts to GaAs
3. Mechanism of forming ohmic contacts to GaAs
4. Rapid Thermal Alloyed Ohmic Contacts to p‐Type GaAs
5. Reduction of specific contact resistance on GaInAsP by rapid thermal process anneal
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