Study of the Ti/InGaAs solid-state reactions: Phase formation sequence and diffusion schemes-Reference-Cited by-同舟云学术

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Study of the Ti/InGaAs solid-state reactions: Phase formation sequence and diffusion schemes

Published:2020-07 Issue: Volume:113 Page:105038
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Bensalem S.,Ghegin E.,Boyer F.,Lábár J.L.,Menyhárd M.,Gergaud P.,Nemouchi F.,Rodriguez Ph.

Funder

Agence Nationale de la Recherche

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference31 articles.

1. Nanometer-scale III-V MOSFETs;Alamo;IEEE J. Electron Devices Soc.,2016

2. III-V-on-silicon photonic devices for optical communication and sensing;Roelkens;Photonics,2015

3. Hybrid III-V/silicon technology for laser integration on a 200 mm fully CMOS-compatible silicon photonics platform;Szelag;IEEE J. Sel. Top. Quantum Electron.,2019

4. Au/Pt/Ti Contacts to p-In0.53Ga0.47As and n-InP layers formed by a single metallization common step and rapid thermal processing;Katz;J. Appl. Phys.,1990

5. Microstructural evidence on direct contact of Au/Ge/Ni/Au ohmic metals to InGaAs channel in pseudomorphic high electron mobility transistor with undoped cap layer;Lee;Appl. Phys. Lett.,1998

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Annealing effect on the barrier characteristics and interface properties of Au/Pt/Ti/n-InAlAs Schottky contacts;Surfaces and Interfaces;2023-07

2. CMOS-Compatible Ti/TiN/Al Refractory Ohmic Contact for GaAs Heterojunction Bipolar Transistors Grown on Ge/Si Substrate;IEEE Transactions on Electron Devices;2021-12

3. Development of Ni2P Contact Technology and its integration on III-V materials for 300 mm Si Photonics Platform;IEEE Journal of the Electron Devices Society;2021

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