Microstructural evidence on direct contact of Au/Ge/Ni/Au ohmic metals to InGaAs channel in pseudomorphic high electron mobility transistor with undoped cap layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122240
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4. Thermally stable, low‐resistance PdGe‐based ohmic contacts to high–low doped n‐GaAs
5. A 68% PAE, GaAs power MESFET operating at 2.3 V drain bias for low distortion power applications
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