Single-voltage-operation pseudomorphic HEMT with low current dissipation for portable power applications
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19971271?crawler=true&mimetype=application/pdf
Reference4 articles.
1. 2.9 V operation GaAs power MESFET with 31.5-dBm output power and 64% power-added efficiency
2. High-low doped power MESFET with 32.0 dBm output power for 3.0 V digital/analogue dual-mode hand-held telephones
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1. Single-voltage-supply operation of Ga0.51In0.49P/AlGaAS/IN0.15Ga0.85As PHEMTS with high-power density;Microwave and Optical Technology Letters;2003-08-28
2. Low-Voltage-Operation High-Power-Density AlGaAs/InGaAs Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor for Personal Handy-Phone Handset Application;Japanese Journal of Applied Physics;2002-01-15
3. Comparative investigation of MBE and MOCVD PMHEMT structures for high frequency applications;Materials Science and Engineering: B;1999-12
4. Microstructural evidence on direct contact of Au/Ge/Ni/Au ohmic metals to InGaAs channel in pseudomorphic high electron mobility transistor with undoped cap layer;Applied Physics Letters;1998-09-21
5. Microstructural and electrical investigation of Pd/Ge/Ti/Au ohmic contact to pseudomorphic high electron mobility transistor with undoped cap layer;Journal of Applied Physics;1998-07-15
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