Au/Pt/Ti contacts top‐In0.53Ga0.47As andn‐InP layers formed by a single metallization common step and rapid thermal processing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346706
Reference16 articles.
1. Pt/Ti/p‐In0.53Ga0.47As low‐resistance nonalloyed ohmic contact formed by rapid thermal processing
2. Pt/Ti Ohmic contact top++‐InGaAsP (1.3 μm) formed by rapid thermal processing
3. Pt/Ti/n‐InP nonalloyed ohmic contacts formed by rapid thermal processing
4. Surface Damage of Reactive Ion Beam Etched GaAs
5. Low Resistance Ti/Pt/Au Ohmic Contacts to GaAs / Al x Ga1 − x As Heterostructures Using Open‐Tube Zn Diffusion
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