Ohmic contacts top‐type InP using Be‐Au metallization
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91539
Reference11 articles.
1. Ideal ohmic contacts to InP
2. Indium Phosphide
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4. Small-area, high-radiance c.w. InGaAsP l.e.d.s emitting at 1.2 to 1.3 μm
5. Zinc contamination and misplaced p-n junctions in InP–GaInPAs d.h. lasers
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