Interdiffusion and wavelength modification in In0.53Ga0.47As/ In0.52Al0.48As quantum wells by lamp annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97497
Reference12 articles.
1. Wavelength modification of AlxGa1−xAs quantum well heterostructure lasers by layer interdiffusion
2. Determination of the microscopic quality of InGaAs‐InAlAs interfaces by photoluminescence—Role of interrupted molecular beam epitaxial growth
3. Optical investigation of modulation‐doped In0.53Ga0.47As/In0.48Al0.52As multiple quantum well heterostructures
4. Thermal‐anneal wavelength modification of multiple‐wellp‐nAlxGa1−xAs‐GaAs quantum‐well lasers
5. Compositional dependence of band‐gap energy and conduction‐band effective mass of In1−x−yGaxAlyAs lattice matched to InP
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