Optical investigation of modulation‐doped In0.53Ga0.47As/In0.48Al0.52As multiple quantum well heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95677
Reference8 articles.
1. Electron mobilities in modulation doped Ga0.47In0.53As/Al0.48In0.52As heterojunctions grown by molecular beam epitaxy
2. Two‐dimensional electron gas at a molecular beam epitaxial‐grown, selectively doped, In0.53Ga0.47As‐In0.48Al0.52As interface
3. 1.5–1.6‐μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxy
4. Optical properties of GaInAs/AlInAs single quantum wells
5. Optical studies of InxGa1−xAs‐GaAs strained multiquantum well structures
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