Optical properties of GaInAs/AlInAs single quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94497
Reference2 articles.
1. GaInAs–AlInAs heterostructures for optical devices grown by MBE
2. Al0.48In0.52As/Ga0.47In0.53As/Al0.48In0.52As double‐heterostructure lasers grown by molecular‐beam epitaxy with lasing wavelength at 1.65 μm
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1. Auger recombination at low temperatures in InGaAs/InAlAs quantum well probed by photoluminescence;Journal of Luminescence;2016-01
2. Relationship of growth mode to surface morphology and dark current in InAlAs/InGaAs avalanche photodiodes grown by MBE on InP;Journal of Crystal Growth;2004-07
3. High direct energy band gaps determination in In[sub x]Al[sub 1−x]As coherently grown on InP;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002
4. Off-state breakdown characteristics of InGaP-based high-barrier gate heterostructure field-effect transistors;Superlattices and Microstructures;2001-11
5. Material parameters of InGaAsP and InAlGaAs systems for use in quantum well structures at low and room temperatures;Physica E: Low-dimensional Systems and Nanostructures;2000-03
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