Auger recombination at low temperatures in InGaAs/InAlAs quantum well probed by photoluminescence-Reference-Cited by-同舟云学术

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Auger recombination at low temperatures in InGaAs/InAlAs quantum well probed by photoluminescence

Published:2016-01 Issue: Volume:169 Page:132-136
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Zhu Liang^ORCID,Song Yuxin,Qi Zhen,Wang Shumin,Zhu Liangqing,Chen Xiren,Zha Fangxing,Guo Shaoling,Shao Jun

Funder

MOST

SITP

STCSM

NSFC

CAS

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference47 articles.

1. “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells

2. Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well

3. Temperature-dependent photoluminescence of GaN grown on β-Si3N4/Si (111) by plasma-assisted MBE

4. Structural and optical properties of GaInP grown on germanium by metal-organic chemical vapor deposition

5. Radiative carrier recombination dependent on temperature and well width of InGaN/GaN single quantum well

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic imaging and optical properties of InAs/In0.5Ga0.5As0.5Sb0.5 type II superlattice;Applied Physics Letters;2024-06-17

2. Dislocation-related photoluminescence of GeSn films grown on Ge (001) substrates by molecular beam epitaxy;Semiconductor Science and Technology;2018-11-16

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