Thermal‐anneal wavelength modification of multiple‐wellp‐nAlxGa1−xAs‐GaAs quantum‐well lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.333277
Reference5 articles.
1. Interdiffusion between GaAs and AlAs
2. Wavelength modification of AlxGa1−xAs quantum well heterostructure lasers by layer interdiffusion
3. Wavelength modification (Δℏω=10–40 meV) of room temperature continuous quantum‐well heterostructure laser diodes by thermal annealing
4. Broadband tuning (ΔE∼100 meV) of AlxGa1−xAs quantum well heterostructure lasers with an external grating
5. Low threshold, high efficiency Ga1−xAlxAs single quantum well visible diode lasers grown by metalorganic chemical vapor deposition
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1. Selective layer disordering in intersubband Al0.028Ga0.972N/AlN superlattices with silicon nitride capping layer;Applied Physics Express;2015-06-01
2. Improved thermal stability of AlGaAs/GaAs/AlGaAs single quantum well by growth on Zn-doped GaAs (001);Thin Solid Films;2003-02
3. Quantum-well intermixing for fabrication of lasers and photonic integrated circuits;IEEE Journal of Selected Topics in Quantum Electronics;1998
4. Optical gain of interdiffused InGaAs-As and AlGaAs-GaAs quantum wells;IEEE Journal of Quantum Electronics;1998
5. Ion-implantation- and thermal-anneal-induced intermixing in thin Si/Ge superlattices;Physical Review B;1993-07-15
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