Wavelength modification (Δℏω=10–40 meV) of room temperature continuous quantum‐well heterostructure laser diodes by thermal annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331957
Reference5 articles.
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5. Photopumped low threshold Alx″Ga1−x″As ‐Alx′Ga1−x′As‐AlxGa1−xAs (x″∼0.85,x′∼0.3,x=0) single quantum well lasers
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1. Improved thermal stability of AlGaAs/GaAs/AlGaAs single quantum well by growth on Zn-doped GaAs (001);Thin Solid Films;2003-02
2. Integration of photonics devices by using quantum well intermixing;SPIE Proceedings;1999-04-28
3. Quantum-well intermixing for fabrication of lasers and photonic integrated circuits;IEEE Journal of Selected Topics in Quantum Electronics;1998
4. Thermal stability of AlGaAs/GaAs single quantum well structures using photoreflectance;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-11
5. Characteristics of laser diodes with a partially intermixed GaAs-AlGaAs quantum well;IEEE Journal of Quantum Electronics;1995
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