Low threshold photopumped AlxGa1−xAs quantum‐well heterostructure lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332335
Reference9 articles.
1. Low-threshold single quantum well (60 Å) GaAlAs lasers grown by MO-CVD with Mg as p-type dopant
2. Carrier collection in a semiconductor quantum well
3. Low threshold, high efficiency Ga1−xAlxAs single quantum well visible diode lasers grown by metalorganic chemical vapor deposition
4. OM-VPE growth of Mg-doped GaAs
5. Induced disorder of AlAs-AlGaAs-GaAs quantum-well heterostructures
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1. Quantum‐well lasers for direct solar photopumping;Journal of Applied Physics;1993-09-15
2. Photoluminescence and stimulated emission from monolayer-thick pseudomorphic InAs single-quantum-well heterostructures;Physical Review B;1990-04-15
3. Stimulated emission from monolayer‐thick AlxGa1−xAs‐GaAs single quantum well heterostructures;Applied Physics Letters;1990-02-12
4. Photopumping of quantum well heterostructures at high or low Q: phonon-assisted laser operation;The Journal of Physical Chemistry;1990-02-08
5. Laser properties and carrier collection in ultrathin quantum-well heterostructures;IEEE Journal of Quantum Electronics;1990
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