Carrier collection in a semiconductor quantum well
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference17 articles.
1. LPE In1−xGaxP1−zAsz(x∼0.12,z∼0.26) DH laser with multiple thin‐layer (<500 Å) active region
2. Room‐temperature laser operation of quantum‐well Ga(1−x)AlxAs‐GaAs laser diodes grown by metalorganic chemical vapor deposition
3. Confined‐carrier luminescence of a thin In1−xGaxP1−zAszwell (x∼0.13,z∼0.29, ∼400 Å) in an InPp‐njunction
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