Carrier trapping and escape times in p-i-n GaInNAs MQW structures
Author:
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Link
http://link.springer.com/content/pdf/10.1186/1556-276X-9-21.pdf
Reference28 articles.
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2. Henini M: Dilute Nitride Semiconductors. Amsterdam: Elsevier Science; 2005.
3. Erol A: Dilute III-V Nitride Semiconductor and Material Systems. Berlin: Springer Series; 2008.
4. Kondow M, Uomi K, Niwa A, Kitatani T, Watahiki S, Yazawa Y: A novel material for long wavelength laser diodes with excellent high temperature performance. Jpn J Appl Phys 1996, 35: 1273–1275. 10.1143/JJAP.35.1273
5. Jewell J, Graham L, Crom M, Maranowski K, Smith J, Fanning T, Schnoes M: Commercial GaInNAs VCSELs grown by MBE. Phys Stat Sol 2008, 5: 2951–2956. 10.1002/pssc.200779295
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