Selective layer disordering in intersubband Al0.028Ga0.972N/AlN superlattices with silicon nitride capping layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/8/i=6/a=061004/pdf
Reference33 articles.
1. Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers
2. Effect of Polarization Field on Intersubband Transition in AlGaN/GaN Quantum Wells
3. Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures
4. III-nitride semiconductors for intersubband optoelectronics: a review
5. Feasibility Study on Ultrafast Nonlinear Optical Properties of 1.55-µ m Intersubband Transition in AlGaN/GaN Quantum Wells
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1. Study of impurities diffusion in Al2O3/GaN/AlxGa1−xN hetero-structures;Journal of Materials Science: Materials in Electronics;2023-01-25
2. Interdiffusion of Al and Ga in AlN/AlGaN superlattices grown by ammonia-assisted molecular beam epitaxy;Superlattices and Microstructures;2021-02
3. Diffusion in GaN/AlN superlattices: DFT and EXAFS study;Applied Surface Science;2020-06
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