Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3479917
Reference19 articles.
1. 30-nm-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with a Current-Gain Cutoff Frequency of 181 GHz
2. DC and RF characterization of AlGaN/GaN HEMTs with different gate recess depths
3. Electroluminescence characterization of AlGaN/GaN high-electron-mobility transistors
4. Optical study of high-biased AlGaN/GaN high-electron-mobility transistors
5. Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC
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