Electroluminescence characterization of AlGaN/GaN high-electron-mobility transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1398332
Reference13 articles.
1. GaN: Processing, defects, and devices
2. High Al-content AlGaN/GaN MODFETs for ultrahigh performance
3. AlGaN/GaN MODFETs on semi-insulating SiC with 3 W/mm at 20 GHz
4. Gate length scaling for Al/sub 0.2/Ga/sub 0.8/N/GaN HJFETs: two-dimensional full band Monte Carlo simulation including polarization effect
5. Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure
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