Identification of photoluminescence P line in indium doped silicon as InSi-Sii defect-Reference-Cited by-同舟云学术

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Identification of photoluminescence P line in indium doped silicon as InSi-Sii defect

Published:2015-01 Issue:1 Volume:5 Page:017101
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Lauer Kevin¹^ORCID,Möller Christian¹^ORCID,Schulze Dirk²,Ahrens Carsten³

Affiliation:

1. CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt, Germany

2. TU Ilmenau, Institut für Physik, Weimarer Str. 32, 98693 Ilmenau, Germany

3. Infineon Technologies AG, Am Campeon 1-12, 85579 Neubiberg, Germany

Funder

Bundesministerium fur Wirtschaft und Technologie (Federal Ministry of Economics and Technology)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/adva/5/1/1.4905066.pdf?itemId=/content/aip/journal/adva/5/1/10.1063/1.4905066&mimeType=pdf&containerItemId=content/aip/journal/adva

Reference50 articles.

1. Use of Indium and Gallium as P-Type Dopants in Si0.1 µmMOSFETs

2. Enhanced electrical activation of indium coimplanted with carbon in a silicon substrate

3. Carbon‐acceptor pair centers (Xcenters) in silicon

4. Investigation of the indium-boron interaction in silicon

5. Energetics and diffusivity of indium-related defects in silicon

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of inelastic ion collisions on low-gain avalanche detectors explained by an ASi-Si -defect mode;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-10

2. Light‐Induced Degradation Transition Energy Barrier Measured by Photoluminescence Spectra in Si:In;physica status solidi (a);2024-08-22

3. Investigation of Tl‐Doped Silicon by Low‐Temperature Photoluminescence during Light‐Induced Degradation Treatments;physica status solidi (a);2024-06-19

4. The A _Si –Si _i Defect Model of Light‐Induced Degradation (LID) in Silicon: A Discussion and Review;physica status solidi (a);2022-08-16

5. Low‐Temperature Photoluminescence Investigation of Light‐Induced Degradation in Boron‐Doped CZ Silicon;physica status solidi (a);2022-07-30

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