Carbon‐acceptor pair centers (Xcenters) in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.329415
Reference20 articles.
1. A new acceptor level in indium‐doped silicon
2. Infrared spectra of new acceptor levels in indium‐ or aluminum‐doped silicon
3. Nature of the 0.111‐eV acceptor level in indium‐doped silicon
4. Unidentified acceptors in silicon and germanium
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