Affiliation:
1. CiS Forschungsinstitut für Mikrosensorik GmbH Konrad‐Zuse‐Str. 14 99099 Erfurt Germany
2. Technische Universität Ilmenau, Institut für Physik Weimarer Str. 32 98693 Ilmenau Germany
Abstract
Scientific progress is made in understanding photoluminescence (PL) lines in thallium‐doped silicon. Two PL lines called A and P, which appear after quenching, are found to exhibit irreversible as well as reversible behavior under the application of light‐induced degradation (LID) treatments. The reversible behavior is similar to changes of a P line in indium‐doped silicon due to LID treatments, which have led to the identification of this P line to be caused by an InSi‐Sii‐defect. By exploiting the metastability of defects from the ASi‐Sii category, the experimental findings of this study indicate that the underlying defect for the A and P line in thallium‐doped silicon is the TlSi‐Sii‐defect.
Funder
Deutsche Forschungsgemeinschaft
Bundesministerium für Wirtschaft und Klimaschutz
Reference19 articles.
1. The
A
Si
–Si
i
Defect Model of Light‐Induced Degradation (LID) in Silicon: A Discussion and Review
2. Light-induced degradation in indium-doped silicon
3. M.Moll inProc. 28th Int. Workshop Vertex Detect. — PoSVertex2019 Sissa Medialab Lopud Croatia2020 p.027.
4. Development of Low‐Gain Avalanche Detectors in the Frame of the Acceptor Removal Phenomenon
5. K.Lauer K.Peh R.Müller D.Schulze R.Schmidt‐Grund S.Krischok A.Flötotto W. J. D.Beenken E.Runge A.Reinhardt M.Bähr S.Reiß A.Frank T.Ortlepp I.Crowe R.Sumathi J. D.Murphy A.Gali A.Pershin M.Moll Examining the properties of the ASi‐Sii‐defects for their potential as qubits submitted2024.