Light-induced degradation in indium-doped silicon-Reference-Cited by-同舟云学术

Light-induced degradation in indium-doped silicon

Published:2013-06-12 Issue:7 Volume:7 Page:461-464
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Möller Christian,Lauer Kevin

Funder

German Federal Ministry of Education and Research within the framework of the Leading-Edge Cluster Competition and the research cluster Solarvalley Central Germany

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201307165/fullpdf

Reference28 articles.

1. H. Fischer W. Pschunder Proc. 10th IEEE Photovoltaic Specialist Conference (IEEE, New York, 1973), p. 404.

2. Light-induced boron-oxygen defect generation in compensated p-type Czochralski silicon

3. Latent complexes of interstitial boron and oxygen dimers as a reason for degradation of silicon-based solar cells

4. The impact of dopant compensation on the boron-oxygen defect in p- and n-type crystalline silicon

5. Light-induced degradation in n-type Czochralski silicon by boron-doping and thermal donor compensation

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