Light-induced degradation in n-type Czochralski silicon by boron-doping and thermal donor compensation
Author:
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4759245
Reference26 articles.
1. Overview of light degradation research on crystalline silicon solar cells
2. Recombination-enhanced formation of the metastable boron–oxygen complex in crystalline silicon
3. Electronically activated boron-oxygen-related recombination centers in crystalline silicon
4. Characterization of the Initial Rapid Decay on Light-Induced Carrier Lifetime and Cell Performance Degradation of Czochralski-Grown Silicon
5. Electronic properties of the metastable defect in boron-doped Czochralski silicon: Unambiguous determination by advanced lifetime spectroscopy
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1. Kinetic suppression of boron–oxygen complexes in p-type Czochralski silicon by tin doping;Applied Physics Express;2018-12-20
2. Impact of Carbon Codoping on Generation and Dissociation of Boron–Oxygen Defects in Czochralski Silicon;Journal of Electronic Materials;2018-06-07
3. Effects of oxygen related thermal donors on the performance of silicon heterojunction solar cells;Solar Energy Materials and Solar Cells;2018-06
4. Impact of carbon co-doping on the performance of crystalline silicon solar cells;Solar Energy Materials and Solar Cells;2016-09
5. Influence of the formation- and passivation rate of boron-oxygen defects for mitigating carrier-induced degradation in silicon within a hydrogen-based model;Journal of Applied Physics;2016-02-14
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