Electronic properties of the metastable defect in boron-doped Czochralski silicon: Unambiguous determination by advanced lifetime spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1544431
Reference6 articles.
1. Minority carrier lifetime degradation in boron-doped Czochralski silicon
2. Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon
3. Lifetime spectroscopy for defect characterization: Systematic analysis of the possibilities and restrictions
4. Statistics of the Recombinations of Holes and Electrons
5. Electron-Hole Recombination in Germanium
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