Affiliation:
1. Laboratory for Photovoltaic Energy Conversion Department of Sustainable Systems Engineering (INATECH) University of Freiburg Emmy-Noether-Str. 2 79110 Freiburg Germany
2. Division Photovoltaics Fraunhofer Institute for Solar Energy Systems (ISE) Heidenhofstraße 2 79110 Freiburg Germany
Abstract
Herein, effects related to reactions involving hydrogen during carrier injection at room temperature in boron‐doped Czochralski‐grown silicon wafers are investigated. It is shown that these conditions lead to boron–oxygen defect regeneration. Under these conditions, bulk material quality degradation induced by a dark annealing can be temporarily recovered in the same way as light and elevated temperature‐induced degradation. Dissociation of boron–hydrogen pairs by carrier injection at room temperature is observed in parallel. These observations are discussed within the framework of known hydrogen reactions. With this study, significant aspects of hydrogen‐related meta‐stabilities at temperatures that are most relevant for solar modules in moderate climates are covered.
Subject
Electrical and Electronic Engineering,Energy Engineering and Power Technology,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献