Kinetic study of GeO disproportionation into a GeO2/Ge system using x-ray photoelectron spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4738892
Reference18 articles.
1. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), p. 789.
2. Oxidation of Ge(100) and Ge(111) surfaces: an UPS and XPS study
3. The adsorption kinetics of molecular oxygen and the desorption kinetics of GeO on Ge( 100)
4. Oxygen scattering and initial chemisorption probability on Ge(100)
5. Direct Evidence of GeO Volatilization from GeO2/Ge and Impact of Its Suppression on GeO2/Ge Metal–Insulator–Semiconductor Characteristics
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