Ge-doped In<sub>2</sub>O<sub>3</sub>: First Demonstration of Utlizing Ge as Oxygen Vacancy Consumer to Break the Mobility/Reliability Tradeoff for High Performance Oxide TFTs-Reference-Cited by-同舟云学术

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Ge-doped In₂O₃: First Demonstration of Utlizing Ge as Oxygen Vacancy Consumer to Break the Mobility/Reliability Tradeoff for High Performance Oxide TFTs

Published:2024-06-16 Issue: Volume:4 Page:1-2
ISSN:
Container-title:2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
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Author:

Wang Jiayi¹,Bai Ziheng²,Zhang Kuo¹,Wu Zhicheng²,Geng Di²,Xu Yang¹,You Nannan¹,Li Yuxuan¹,Yang Guanhua²,Li Ling²,Wang Shengkai¹,Liu Ming²

Affiliation:

1. High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Chinese Academy of Sciences, Institute of Microelectronics,Beijing,China,100029

2. Chinese Academy of Sciences, Institute of Microelectronics,Key Lab of Fabrication Technologies for Integrated Circuits,Beijing,China,100029

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Youth Innovation Promotion Association

Chinese Academy of Sciences

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10631290/10631310/10631346.pdf?arnumber=10631346

Reference9 articles.

1. Mobility–stability trade-off in oxide thin-film transistors

2. Instability in threshold voltage and subthreshold behavior in Hf–In–Zn–O thin film transistors induced by bias-and light-stress

3. L-Phys

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