Atom-Scaled Hafnium Doping for Strengthening the Germanium Oxide Interfacial Layer of The Gate Stack of Germanium P-Type Metal-Oxide-Semiconductor Field Effect Transistor

Abstract

We have developed a method that uses a half-cycle Hf precursor adsorption to subtly dope GeO2 IL of the Hf-based gate stack through in situ plasma-enhanced atomic layer deposition. This technique can effectively reduce GeO vaporization and improve the thermal stability of the GeO2 layer. Our results indicated that the accumulation capacitance (Cacc) undergoing higher temperatures showed no noticeable increase in the capacitance-voltage (CV) curves once Hf was delicately introduced into the GeO2 layer. According to the Ge 3d spectra of X-ray photoelectron spectroscopy, we found that the IL had a signal from extra Hf-O bonds; thus, we conclude GeO evaporation can be suppressed substantially by Hf incorporation. As a result, adding metal into GeOx IL to form HfGeOx achieved a remarkably low leakage current of 9 × 10−5 A cm−2 and the lowest interface trap density (Dit) of approximately 2 × 1011 eV−1 cm−2 at 500 °C of PMA. In addition, applying this gate stack structure to device fabrication significantly reduced the leakage current of the off-state and improved the effective peak hole mobility.