The molecular beam epitaxial growth of GaAs/GaAs(111)B: doping and growth temperature studies
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350638
Reference23 articles.
1. Morphology of Epitaxial Growth of GaAs by a Molecular Beam Method: The Observation of Surface Structures
2. Strain-generated electric fields in [111] growth axis strained-layer superlattices
3. Direct demonstration of a misfit strain‐generated electric field in a [111] growth axis zinc‐blende heterostructure
4. Patterned quantum well semiconductor injection laser grown by molecular beam epitaxy
5. Crystal orientation dependence of silicon autocompensation in molecular beam epitaxial gallium arsenide
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5. Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110);Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-01
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