Study on capacitance-voltage properties of Bi2Ti2O7/n-Si (100) films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1490628
Reference15 articles.
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1. Sol–gel preparation of well-adhered films and long range ordered inverse opal films of BaTiO3 and Bi2Ti2O7;Materials Research Bulletin;2016-02
2. Effect of Bi2Ti2O7 Seeding Layer on Capacitance-voltage Properties of Bi3.54Nd0.46Ti3O12 Films;Journal of Materials Science & Technology;2010-03
3. The Ferroelectric and Charge Injection Effects of Metal–Ferroelectric (BiFe[sub 0.95]Mn[sub 0.05]O[sub 3])–Insulator (Bi[sub 2]Ti[sub 2]O[sub 7])–Silicon Capacitors;Electrochemical and Solid-State Letters;2010
4. Structural study of a sol-gel derived pyrochlore Bi2Ti2O7 using a Rietveld analysis method based on neutron scattering studies;Journal of Applied Physics;2009-03-15
5. EFFECT OF Ce-DOPING ON STRUCTURAL AND ELECTRICAL PROPERTIES OF DIELECTRIC Bi2Ti2O7 THIN FILMS;Surface Review and Letters;2008-12
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