The Ferroelectric and Charge Injection Effects of Metal–Ferroelectric (BiFe[sub 0.95]Mn[sub 0.05]O[sub 3])–Insulator (Bi[sub 2]Ti[sub 2]O[sub 7])–Silicon Capacitors
Author:
Publisher
The Electrochemical Society
Subject
Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering
Reference28 articles.
1. J. F. Scott , Ferroelectric Memories , Springer-Verlag, Berlin (2001).
2. Low-voltage operation and excellent data retention characteristics of metal-ferroelectric-insulator-Si devices based on organic ferroelectric films
3. Fabrication and characterization of metal-ferroelectric (PbZr0.53Ti0.47O3)-Insulator (Y2O3)-semiconductor field effect transistors for nonvolatile memory applications
4. Fabrication and characterization of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (Dy2O3)-semiconductor capacitors for nonvolatile memory applications
5. Fabrication and characterization of metal-ferroelectric (PbZr0.6Ti0.4O3)-insulator (La2O3)-semiconductor capacitors for nonvolatile memory applications
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