Low-voltage operation and excellent data retention characteristics of metal-ferroelectric-insulator-Si devices based on organic ferroelectric films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3097691
Reference22 articles.
1. Ferroelectric Memories
2. Fatigue-free ferroelectric capacitors with platinum electrodes
3. Self-Aligned-Gate Metal/Ferroelectric/Insulator/Semiconductor Field-Effect Transistors with Long Memory Retention
4. Optimum ambient N[sub 2] pressure during HfAlO pulsed-laser deposition in Pt∕SBT∕HfAlO∕Si field effect transistors
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