Affiliation:
1. State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China
Abstract
Ce -doped Bi 2 Ti 2 O 7 thin films have been successfully prepared on P-type Si substrates by a chemical solution deposition method. The structural properties of the films were studied by X-ray diffraction. The phase of Ce -doped Bi 2 Ti 2 O 7 was more stable than that of Bi 2 Ti 2 O 7 without Ce substitution. The films exhibited good insulating properties at room temperature. The dielectric constant of the films annealed at 700°C at 100 kHz was 168 and the dissipation factor was 0.038. All these results showed that Ce -doped Bi 2 Ti 2 O 7 thin films could be used as storage capacitors in DRAM and MOS.
Publisher
World Scientific Pub Co Pte Lt
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Cited by
3 articles.
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