A comparative study of heterostructures InP/GaAs (001) and InP/GaAs (111) grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368053
Reference24 articles.
1. Vapor phase epitaxial growth and characterization of InP on GaAs
2. Heteroepitaxial growth of InP on GaAs by low‐pressure metalorganic chemical vapor deposition
3. Heteroepitaxial growth of InP on a GaAs substrate by low‐pressure metalorganic vapor phase epitaxy
4. Direct MOVPE growth of InP on GaAs substrates
5. Improvement of InP crystal quality grown on GaAs substrates and device applications
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3. SPIN RELAXATION IN InP AND STRAINED InP NANOWIRES;SPIN;2014-09
4. Extended excitons and compact heliumlike biexcitons in type-II quantum dots;Physical Review B;2009-11-18
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