Analysis of stress‐induced void growth mechanisms in passivated interconnect lines
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354480
Reference22 articles.
1. Stress distribution in an aluminum interconnect of very large scale integration
2. Mechanisms of thermal stress relaxation and stress‐induced voiding in narrow aluminum‐based metallizations
3. X‐ray diffraction determination of the effect of various passivations on stress in metal films and patterned lines
4. Stress relaxation of passivated aluminum line metallizations on silicon substrates
5. Stress‐induced nucleation of voids in narrow aluminum‐based metallizations on silicon substrates
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2. Study of Electromigration-Induced Void Nucleation Problem Dominated by Bulk, Grain Boundary, and Interfacial Diffusion Based on an Improved Energy Approach;IEEE Transactions on Components, Packaging and Manufacturing Technology;2022-10
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