Stress‐induced nucleation of voids in narrow aluminum‐based metallizations on silicon substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349852
Reference23 articles.
1. Stress-induced grain boundary fractures in Al–Si interconnects
2. Analysis of thermal stress‐induced grain boundary cavitation and notching in narrow Al‐Si metallizations
3. Mechanisms of thermal stress relaxation and stress‐induced voiding in narrow aluminum‐based metallizations
4. A model for stress-induced metal notching and voiding in very large-scale-integrated Al–Si (1%) metallization
5. Crack and cavity nucleation at interfaces during creep
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